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dc.provenanceCONICET-
dc.creatorSambuco Salomone, Lucas Ignacio-
dc.creatorHolmes Siedle, A.-
dc.creatorFaigon, Adrián Néstor-
dc.date2018-06-04T20:46:17Z-
dc.date2018-06-04T20:46:17Z-
dc.date2016-12-
dc.date2018-06-04T17:30:43Z-
dc.date.accessioned2019-04-29T15:39:14Z-
dc.date.available2019-04-29T15:39:14Z-
dc.date.issued2016-12-
dc.identifierSambuco Salomone, Lucas Ignacio; Holmes Siedle, A.; Faigon, Adrián Néstor; Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 63; 6; 12-2016; 2997-3002-
dc.identifier0018-9499-
dc.identifierhttp://hdl.handle.net/11336/47237-
dc.identifier1558-1578-
dc.identifierCONICET Digital-
dc.identifierCONICET-
dc.identifier.urihttp://rodna.bn.gov.ar:8080/jspui/handle/bnmm/298640-
dc.descriptionTechniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. The response of the REM RFT300 RADFET dosimeter during bias cycled measurements shows a slow shift of the quasi-steady state threshold voltage value during radiation-induced charge neutralization. This phenomenon was previously explained as due to the presence of border traps. In this work, a recently developed numerical model which included the main physical processes leading to hole trapping and neutralization in MOS oxides was used to reproduce this experiment. The application of the model shows that the slow shift of the quasi-steady state threshold voltage during neutralization stages is a consequence of the spatial redistribution of trapped charge within the oxide. The effect this phenomenon has on MOS dosimetry is analyzed.-
dc.descriptionFil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentina-
dc.descriptionFil: Holmes Siedle, A.. REM Oxford; Reino Unido-
dc.descriptionFil: Faigon, Adrián Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentina-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.languageeng-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/https://dx.doi.org/10.1109/TNS.2016.2626273-
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/7738582/-
dc.rightsinfo:eu-repo/semantics/restrictedAccess-
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/-
dc.sourcereponame:CONICET Digital (CONICET)-
dc.sourceinstname:Consejo Nacional de Investigaciones Científicas y Técnicas-
dc.sourceinstacron:CONICET-
dc.source.urihttp://hdl.handle.net/11336/47237-
dc.subjectMOSFETs-
dc.subjectRadiation effects-
dc.subjectSolid state detectors-
dc.subjectFísica Nuclear-
dc.subjectCiencias Físicas-
dc.subjectCIENCIAS NATURALES Y EXACTAS-
dc.titleLong Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.typeinfo:ar-repo/semantics/articulo-
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