Registro completo de metadatos
| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.provenance | CONICET | - |
| dc.creator | Ventura, Cecilia Ileana | - |
| dc.creator | Querales Flores, Jose Daniel | - |
| dc.creator | Fuhr, Javier Daniel | - |
| dc.creator | Barrio, Rafael A | - |
| dc.date | 2018-03-05T19:13:55Z | - |
| dc.date | 2018-03-05T19:13:55Z | - |
| dc.date | 2015-01 | - |
| dc.date | 2018-03-02T14:08:15Z | - |
| dc.date.accessioned | 2019-04-29T15:41:14Z | - |
| dc.date.available | 2019-04-29T15:41:14Z | - |
| dc.date.issued | 2018-03-05T19:13:55Z | - |
| dc.date.issued | 2018-03-05T19:13:55Z | - |
| dc.date.issued | 2015-01 | - |
| dc.date.issued | 2018-03-02T14:08:15Z | - |
| dc.identifier | Ventura, Cecilia Ileana; Querales Flores, Jose Daniel; Fuhr, Javier Daniel; Barrio, Rafael A; Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells; John Wiley & Sons Ltd; Progress In Photovoltaics; 23; 1; 1-2015; 112-118 | - |
| dc.identifier | 1062-7995 | - |
| dc.identifier | http://hdl.handle.net/11336/37847 | - |
| dc.identifier | CONICET Digital | - |
| dc.identifier | CONICET | - |
| dc.identifier.uri | http://rodna.bn.gov.ar:8080/jspui/handle/bnmm/299524 | - |
| dc.description | Ternary group-IV alloys have a wide potential for applications in infrared devices and optoelectronics. In connection with photovoltaic applications, they are among the most promising materials for inclusion in the next generation of high-efficiency multijunction solar cells, because they can be lattice matched to substrates as GaAs and Ge, offering the possibility of a range of band gaps complementary to III-V semiconductors. Apart from the full decoupling of lattice and band structures in Ge1-x-ySixSny alloys, experimentally confirmed, they allow preparation in a controllable and large range of compositions, thus enabling to tune their band gap. Recently, optical experiments on ternary alloy-based films, photodetectors measured the direct absorption edges and probed the compositional dependence of the direct gap. The nature of the fundamental gap of Ge1-x-ySixSny alloys is still unknown, as neither experimental data on the indirect edges nor electronic structure calculations are available, as yet. Here, we report a first calculation of the electronic structure of Ge1-x-ySixSny ternary alloys, employing a combined tight-binding and virtual crystal approximation method, which proved to be useful to describe group-IV semiconductor binary alloys. Our results confirm predictions and experimental indications that a 1 eV band gap is indeed attainable with these ternary alloys, as required for the fourth layer plan to be added to present-day record-efficiency triple-junction solar cells, to further increase their efficiency, for example, for satellite applications. When lattice matched to Ge, we find that Ge1-x-ySixSny ternary alloys have an indirect gap with a compositional dependence reflecting the presence of two competing minima in the conduction band. | - |
| dc.description | Fil: Ventura, Cecilia Ileana. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina | - |
| dc.description | Fil: Querales Flores, Jose Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Universidad Nacional de Río Negro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina | - |
| dc.description | Fil: Fuhr, Javier Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina | - |
| dc.description | Fil: Barrio, Rafael A. Universidad Nacional Autónoma de México; México | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.language | eng | - |
| dc.publisher | John Wiley & Sons Ltd | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1002/pip.2405 | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pip.2405/abstract | - |
| dc.rights | info:eu-repo/semantics/restrictedAccess | - |
| dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | - |
| dc.source | reponame:CONICET Digital (CONICET) | - |
| dc.source | instname:Consejo Nacional de Investigaciones Científicas y Técnicas | - |
| dc.source | instacron:CONICET | - |
| dc.source.uri | http://hdl.handle.net/11336/60493 | - |
| dc.subject | ELECTRONIC STRUCTURE | - |
| dc.subject | MULTIJUNCTION SOLAR CELLS | - |
| dc.subject | SEMICONDUCTOR ALLOYS | - |
| dc.subject | Astronomía | - |
| dc.subject | Ciencias Físicas | - |
| dc.subject | CIENCIAS NATURALES Y EXACTAS | - |
| dc.title | Electronic structure of Ge1-x-ySixSny ternary alloys for multijunction solar cells | - |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.type | info:ar-repo/semantics/articulo | - |
| Aparece en las colecciones: | CONICET | |
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