Registro completo de metadatos
| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.creator | Schipani, Federico | - |
| dc.creator | Aldao, Celso Manuel | - |
| dc.creator | Ponce, Miguel Adolfo | - |
| dc.date | 2017-01-03T15:22:23Z | - |
| dc.date | 2017-01-03T15:22:23Z | - |
| dc.date | 2012-11-09 | - |
| dc.date | 2017-01-02T18:31:08Z | - |
| dc.date.accessioned | 2019-04-29T15:43:27Z | - |
| dc.date.available | 2019-04-29T15:43:27Z | - |
| dc.date.issued | 2017-01-03T15:22:23Z | - |
| dc.date.issued | 2017-01-03T15:22:23Z | - |
| dc.date.issued | 2012-11-09 | - |
| dc.date.issued | 2017-01-02T18:31:08Z | - |
| dc.identifier | Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors; Iop Publishing; Journal Of Physics D: Applied Physics; 45; 9-11-2012; 495302-495307 | - |
| dc.identifier | 0022-3727 | - |
| dc.identifier | http://hdl.handle.net/11336/10742 | - |
| dc.identifier.uri | http://rodna.bn.gov.ar:8080/jspui/handle/bnmm/300365 | - |
| dc.description | The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis. | - |
| dc.description | Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina | - |
| dc.description | Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina | - |
| dc.description | Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.language | eng | - |
| dc.publisher | Iop Publishing | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1088/0022-3727/45/49/495302 | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/45/49/495302 | - |
| dc.rights | info:eu-repo/semantics/restrictedAccess | - |
| dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | - |
| dc.source | reponame:CONICET Digital (CONICET) | - |
| dc.source | instname:Consejo Nacional de Investigaciones Científicas y Técnicas | - |
| dc.source | instacron:CONICET | - |
| dc.subject | POLLYCRYSTALLINE | - |
| dc.subject | MOTT-SCHOTTKY | - |
| dc.subject | Física de los Materiales Condensados | - |
| dc.subject | Ciencias Físicas | - |
| dc.subject | CIENCIAS NATURALES Y EXACTAS | - |
| dc.title | Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors | - |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.type | info:ar-repo/semantics/articulo | - |
| Aparece en las colecciones: | CONICET | |
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