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dc.creatorTamborenea, Pablo Ignacio-
dc.creatorWellens, Thomas-
dc.creatorWeinmann, Dietmar-
dc.creatorJalabert, Rodolfo-
dc.date2018-04-20T18:17:24Z-
dc.date2018-04-20T18:17:24Z-
dc.date2017-09-18-
dc.date2018-04-16T14:30:37Z-
dc.date.accessioned2019-04-29T15:43:33Z-
dc.date.available2019-04-29T15:43:33Z-
dc.date.issued2018-04-20T18:17:24Z-
dc.date.issued2018-04-20T18:17:24Z-
dc.date.issued2017-09-18-
dc.date.issued2018-04-16T14:30:37Z-
dc.identifierTamborenea, Pablo Ignacio; Wellens, Thomas; Weinmann, Dietmar; Jalabert, Rodolfo; Spin-relaxation time in the impurity band of wurtzite semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 96; 12; 18-9-2017; 1-27; 125205-
dc.identifier1098-0121-
dc.identifierhttp://hdl.handle.net/11336/42898-
dc.identifierCONICET Digital-
dc.identifierCONICET-
dc.identifier.urihttp://rodna.bn.gov.ar:8080/jspui/handle/bnmm/300409-
dc.descriptionThe spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study.-
dc.descriptionFil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina-
dc.descriptionFil: Wellens, Thomas. Physikalisches Institut der Albert-Ludwigs-Universität; Alemania-
dc.descriptionFil: Weinmann, Dietmar. Université de Strasbourg; Francia-
dc.descriptionFil: Jalabert, Rodolfo. Université de Strasbourg; Francia-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.languageeng-
dc.publisherAmerican Physical Society-
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://link.aps.org/doi/10.1103/PhysRevB.96.125205-
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1103/PhysRevB.96.125205-
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://arxiv.org/pdf/1706.07318.pdf-
dc.rightsinfo:eu-repo/semantics/openAccess-
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/-
dc.sourcereponame:CONICET Digital (CONICET)-
dc.sourceinstname:Consejo Nacional de Investigaciones Científicas y Técnicas-
dc.sourceinstacron:CONICET-
dc.subjectSEMICONDUCTORS-
dc.subjectWURTZITE-
dc.subjectSPIN RELAXATION-
dc.subjectSPINTRONICS-
dc.subjectAstronomía-
dc.subjectCiencias Físicas-
dc.subjectCIENCIAS NATURALES Y EXACTAS-
dc.titleSpin-relaxation time in the impurity band of wurtzite semiconductors-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.typeinfo:ar-repo/semantics/articulo-
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