Registro completo de metadatos
| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.creator | García Molleja, Javier | - |
| dc.creator | Gomez, Bernardo Jose Armando | - |
| dc.creator | Ferron, Julio | - |
| dc.creator | Gautron, Eric | - |
| dc.creator | Burgi, Juan Mauel | - |
| dc.creator | Abdallah, Bassam | - |
| dc.creator | Djouadi, Mohamed Abdou | - |
| dc.creator | Feugeas, Jorge Nestor | - |
| dc.creator | Jouan, Pierre-Yves | - |
| dc.date | 2016-02-25T17:41:40Z | - |
| dc.date | 2016-02-25T17:41:40Z | - |
| dc.date | 2013-11 | - |
| dc.date | 2016-03-30 10:35:44.97925-03 | - |
| dc.date.accessioned | 2019-04-29T15:48:15Z | - |
| dc.date.available | 2019-04-29T15:48:15Z | - |
| dc.date.issued | 2013-11 | - |
| dc.identifier | García Molleja, Javier; Gomez, Bernardo Jose Armando; Ferron, Julio; Gautron, Eric; Burgi, Juan Mauel; et al.; AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth; EDP Sciences; European Physical Journal Applied Physics; 64; 11-2013; 20302-20302 | - |
| dc.identifier | 1286-0050 | - |
| dc.identifier | http://hdl.handle.net/11336/4420 | - |
| dc.identifier.uri | http://rodna.bn.gov.ar:8080/jspui/handle/bnmm/302464 | - |
| dc.description | Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour. | - |
| dc.description | Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina. Institut des Matériaux Jean Rouxel; Francia | - |
| dc.description | Fil: Gomez, Bernardo Jose Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina | - |
| dc.description | Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; Argentina | - |
| dc.description | Fil: Gautron, Eric. Institut des Matériaux Jean Rouxel; Francia | - |
| dc.description | Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina | - |
| dc.description | Fil: Abdallah, Bassam. Institut des Matériaux Jean Rouxel; Francia. Atomic Energy Commission of Syria. Physics Department; Siria | - |
| dc.description | Fil: Djouadi, Mohamed Abdou. Institut des Matériaux Jean Rouxel; Francia | - |
| dc.description | Fil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina | - |
| dc.description | Fil: Jouan, Pierre-Yves . Institut des Matériaux Jean Rouxel; Francia | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.language | eng | - |
| dc.publisher | EDP Sciences | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/url/http://epjap.epj.org/articles/epjap/abs/2013/11/ap130445/ap130445.html | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1051/epjap/2013130445 | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/issn/1286-0050 | - |
| dc.rights | info:eu-repo/semantics/restrictedAccess | - |
| dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | - |
| dc.source | reponame:CONICET Digital (CONICET) | - |
| dc.source | instname:Consejo Nacional de Investigaciones Científicas y Técnicas | - |
| dc.source | instacron:CONICET | - |
| dc.source.uri | http://hdl.handle.net/11336/36377 | - |
| dc.subject | Magnetron sputtering | - |
| dc.subject | Film growth | - |
| dc.subject | Aluminum nitride | - |
| dc.subject | Recubrimientos y Películas | - |
| dc.subject | Ingeniería de los Materiales | - |
| dc.subject | INGENIERÍAS Y TECNOLOGÍAS | - |
| dc.title | AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth | - |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.type | info:ar-repo/semantics/articulo | - |
| Aparece en las colecciones: | CONICET | |
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