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dc.creatorAcha, Carlos Enrique-
dc.creatorSchulman, Alejandro Raúl-
dc.creatorBoudard, Miguel Santiago-
dc.creatorDaoudi, K.-
dc.creatorTsuchiya, T.-
dc.date2018-06-04T18:17:56Z-
dc.date2018-06-04T18:17:56Z-
dc.date2016-07-
dc.date2018-06-01T13:57:17Z-
dc.date.accessioned2019-04-29T15:49:41Z-
dc.date.available2019-04-29T15:49:41Z-
dc.date.issued2016-07-
dc.identifierAcha, Carlos Enrique; Schulman, Alejandro Raúl; Boudard, Miguel Santiago; Daoudi, K.; Tsuchiya, T.; Transport mechanism through metal-cobaltite interfaces; American Institute of Physics; Applied Physics Letters; 109; 7-2016; 11603-11603-
dc.identifier0003-6951-
dc.identifierhttp://hdl.handle.net/11336/47182-
dc.identifierCONICET Digital-
dc.identifierCONICET-
dc.identifier.urihttp://rodna.bn.gov.ar:8080/jspui/handle/bnmm/303107-
dc.descriptionThe resistive switching (RS) properties as a function of temperature were studied for Ag/La(1−x)SrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.-
dc.descriptionFil: Acha, Carlos Enrique. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina-
dc.descriptionFil: Schulman, Alejandro Raúl. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina-
dc.descriptionFil: Boudard, Miguel Santiago. Centre National de la Recherche Scientifique; Francia-
dc.descriptionFil: Daoudi, K.. Centre National de la Recherche Scientifique; Francia-
dc.descriptionFil: Tsuchiya, T.. Centre National de la Recherche Scientifique; Francia-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.languageeng-
dc.publisherAmerican Institute of Physics-
dc.relationinfo:eu-repo/semantics/altIdentifier/url/http://scitation.aip.org/content/aip/journal/apl/109/1/10.1063/1.4955204-
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/full/10.1063/1.4955204-
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4955204-
dc.rightsinfo:eu-repo/semantics/restrictedAccess-
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/-
dc.sourcereponame:CONICET Digital (CONICET)-
dc.sourceinstname:Consejo Nacional de Investigaciones Científicas y Técnicas-
dc.sourceinstacron:CONICET-
dc.subjectMemoria resistiva-
dc.subjectConducción eléctrica-
dc.subjectPoole-Frenkel-
dc.subjectEfecto Maxwell-Wagner-
dc.subjectAstronomía-
dc.subjectCiencias Físicas-
dc.subjectCIENCIAS NATURALES Y EXACTAS-
dc.titleTransport mechanism through metal-cobaltite interfaces-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.typeinfo:ar-repo/semantics/articulo-
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