Registro completo de metadatos
Campo DC Valor Lengua/Idioma
dc.creatorFujiwara, Kohei-
dc.creatorYajima, Takeshi-
dc.creatorNakamura, Yoshinobu-
dc.creatorRozenberg, Marcelo Javier-
dc.creatorTakagi, Hidenori-
dc.date2018-09-24T15:50:54Z-
dc.date2018-09-24T15:50:54Z-
dc.date2009-10-
dc.date2018-09-24T14:50:03Z-
dc.date.accessioned2019-04-29T15:50:15Z-
dc.date.available2019-04-29T15:50:15Z-
dc.date.issued2009-10-
dc.identifierFujiwara, Kohei; Yajima, Takeshi; Nakamura, Yoshinobu; Rozenberg, Marcelo Javier; Takagi, Hidenori; Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices; Japan Society Applied Physics; Applied Physics Express; 2; 10-2009; 81401-81408-
dc.identifier1882-0778-
dc.identifierhttp://hdl.handle.net/11336/60736-
dc.identifierCONICET Digital-
dc.identifierCONICET-
dc.identifier.urihttp://rodna.bn.gov.ar:8080/jspui/handle/bnmm/303345-
dc.descriptionControl of the formation of conductive bridge between the metal electrodes in planar-type resistance switching device was attempted. We demonstrated in Pt/CuO/Pt devices that, using a triangular seed electrode for soft breakdown, the position and the size of the bridge can be controlled. The decrease in the size resulted in the drastic reduction of operation voltage and current to the same level as in capacitortype stacked device. We argue that the planar-type device might have a certain advantage for future non-volatile memory application.-
dc.descriptionFil: Fujiwara, Kohei. university of Tokyo; Japón-
dc.descriptionFil: Yajima, Takeshi. university of Tokyo; Japón-
dc.descriptionFil: Nakamura, Yoshinobu. university of Tokyo; Japón-
dc.descriptionFil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina-
dc.descriptionFil: Takagi, Hidenori. university of Tokyo; Japón-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.languageeng-
dc.publisherJapan Society Applied Physics-
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1143/APEX.2.081401-
dc.rightsinfo:eu-repo/semantics/restrictedAccess-
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/-
dc.sourcereponame:CONICET Digital (CONICET)-
dc.sourceinstname:Consejo Nacional de Investigaciones Científicas y Técnicas-
dc.sourceinstacron:CONICET-
dc.subjectResistive switching-
dc.subjectAstronomía-
dc.subjectCiencias Físicas-
dc.subjectCIENCIAS NATURALES Y EXACTAS-
dc.titleElectrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.typeinfo:ar-repo/semantics/articulo-
Aparece en las colecciones: CONICET

Ficheros en este ítem:
No hay ficheros asociados a este ítem.