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| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.creator | Jiménez Zambrano, Raúl | - |
| dc.creator | Rubinelli, Francisco Alberto | - |
| dc.creator | Arnoldbik, Wim | - |
| dc.creator | Rath, Jatindra K. | - |
| dc.creator | Schropp, Ruud | - |
| dc.date | 2017-10-31T17:29:29Z | - |
| dc.date | 2017-10-31T17:29:29Z | - |
| dc.date | 2004-08 | - |
| dc.date | 2017-10-30T18:43:56Z | - |
| dc.date.accessioned | 2019-04-29T15:52:19Z | - |
| dc.date.available | 2019-04-29T15:52:19Z | - |
| dc.date.issued | 2004-08 | - |
| dc.identifier | Jiménez Zambrano, Raúl; Rubinelli, Francisco Alberto; Arnoldbik, Wim; Rath, Jatindra K.; Schropp, Ruud; Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells; Elsevier Science; Solar Energy Materials And Solar Cells; 81; 1; 8-2004; 73-86 | - |
| dc.identifier | 0927-0248 | - |
| dc.identifier | http://hdl.handle.net/11336/27247 | - |
| dc.identifier | CONICET Digital | - |
| dc.identifier | CONICET | - |
| dc.identifier.uri | http://rodna.bn.gov.ar:8080/jspui/handle/bnmm/304241 | - |
| dc.description | A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results. | - |
| dc.description | Fil: Jiménez Zambrano, Raúl. Utrecht University; Países Bajos | - |
| dc.description | Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina | - |
| dc.description | Fil: Arnoldbik, Wim. Utrecht University; Países Bajos | - |
| dc.description | Fil: Rath, Jatindra K.. Utrecht University; Países Bajos | - |
| dc.description | Fil: Schropp, Ruud. Utrecht University; Países Bajos | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.language | eng | - |
| dc.publisher | Elsevier Science | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.solmat.2003.08.017 | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0927024803002125 | - |
| dc.rights | info:eu-repo/semantics/restrictedAccess | - |
| dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | - |
| dc.source | reponame:CONICET Digital (CONICET) | - |
| dc.source | instname:Consejo Nacional de Investigaciones Científicas y Técnicas | - |
| dc.source | instacron:CONICET | - |
| dc.subject | SiGe Solar Cells | - |
| dc.subject | Bangap Engineering | - |
| dc.subject | Modelling | - |
| dc.subject | Efficiency | - |
| dc.subject | Ingeniería de Sistemas y Comunicaciones | - |
| dc.subject | Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información | - |
| dc.subject | INGENIERÍAS Y TECNOLOGÍAS | - |
| dc.title | Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells | - |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.type | info:ar-repo/semantics/articulo | - |
| Aparece en las colecciones: | CONICET | |
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