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Campo DC Valor Lengua/Idioma
dc.creatorBueno, Paulo R.-
dc.creatorTararan, Ronald-
dc.creatorParra, Rodrigo-
dc.creatorJoanni, Ednan-
dc.creatorRamírez, Miguel A.-
dc.creatorRibeiro, Willian C.-
dc.creatorLongo, Elson-
dc.creatorVarela, José A.-
dc.date2018-12-17T17:29:46Z-
dc.date2018-12-17T17:29:46Z-
dc.date2009-02-09-
dc.date2018-12-05T14:36:22Z-
dc.date.accessioned2019-04-29T15:54:53Z-
dc.date.available2019-04-29T15:54:53Z-
dc.identifierBueno, Paulo R.; Tararan, Ronald; Parra, Rodrigo; Joanni, Ednan; Ramírez, Miguel A.; et al.; A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features; IOP Publishing; Journal of Physics D: Applied Physics; 42; 5; 9-2-2009; 1-9-
dc.identifier0022-3727-
dc.identifierhttp://hdl.handle.net/11336/66566-
dc.identifierCONICET Digital-
dc.identifierCONICET-
dc.identifier.urihttp://rodna.bn.gov.ar:8080/jspui/handle/bnmm/305228-
dc.descriptionThis paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the intrinsic versus extrinsic debate about the origin of the unusually high values of the dielectric constant measured for CCTO in its various forms. Therefore, by considering stacking fault as the origin of the high dielectric constant phenomena, it was shown that the internal barrier layer capacitance mechanism is enhanced by another similar, but different in nature, mechanism that operates in the nanoscale range due to polaron defects associated with stacking fault, a mechanism that was referred to as nanoscale barrier layer capacitance (NBLC). The NBLC approach explains the origin of the CCTO´s huge dielectric constant coexisting with semiconducting features.-
dc.descriptionFil: Bueno, Paulo R.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil-
dc.descriptionFil: Tararan, Ronald. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil-
dc.descriptionFil: Parra, Rodrigo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina-
dc.descriptionFil: Joanni, Ednan. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil-
dc.descriptionFil: Ramírez, Miguel A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil-
dc.descriptionFil: Ribeiro, Willian C.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil-
dc.descriptionFil: Longo, Elson. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil-
dc.descriptionFil: Varela, José A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil-
dc.formatapplication/pdf-
dc.formatapplication/pdf-
dc.languageeng-
dc.publisherIOP Publishing-
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/https://dx.doi.org/10.1088/0022-3727/42/5/055404-
dc.relationinfo:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/42/5/055404-
dc.rightsinfo:eu-repo/semantics/restrictedAccess-
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/-
dc.sourcereponame:CONICET Digital (CONICET)-
dc.sourceinstname:Consejo Nacional de Investigaciones Científicas y Técnicas-
dc.sourceinstacron:CONICET-
dc.subjectCaCu3Ti4O12-
dc.titleA polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.typeinfo:ar-repo/semantics/articulo-
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