Registro completo de metadatos
| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.creator | Rubinelli, Francisco Alberto | - |
| dc.creator | Ramirez Jimenez, Helena | - |
| dc.creator | Ruiz Tobon, Carlos Mario | - |
| dc.creator | Schmidt, Javier Alejandro | - |
| dc.date | 2017-09-13T20:35:08Z | - |
| dc.date | 2017-09-13T20:35:08Z | - |
| dc.date | 2017-05 | - |
| dc.date | 2017-09-08T14:21:54Z | - |
| dc.date.accessioned | 2019-04-29T15:57:24Z | - |
| dc.date.available | 2019-04-29T15:57:24Z | - |
| dc.identifier | Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Ruiz Tobon, Carlos Mario; Schmidt, Javier Alejandro; Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools; American Institute of Physics; Journal of Applied Physics; 121; 5-2017; 1845021-18450214 | - |
| dc.identifier | 0021-8979 | - |
| dc.identifier | http://hdl.handle.net/11336/24208 | - |
| dc.identifier | CONICET Digital | - |
| dc.identifier | CONICET | - |
| dc.identifier.uri | http://rodna.bn.gov.ar:8080/jspui/handle/bnmm/306173 | - |
| dc.description | Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at −2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized. | - |
| dc.description | Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina | - |
| dc.description | Fil: Ramirez Jimenez, Helena. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina | - |
| dc.description | Fil: Ruiz Tobon, Carlos Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina | - |
| dc.description | Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.language | eng | - |
| dc.publisher | American Institute of Physics | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4983010 | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4983010 | - |
| dc.rights | info:eu-repo/semantics/restrictedAccess | - |
| dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | - |
| dc.source | reponame:CONICET Digital (CONICET) | - |
| dc.source | instname:Consejo Nacional de Investigaciones Científicas y Técnicas | - |
| dc.source | instacron:CONICET | - |
| dc.subject | SOLAR CELLS | - |
| dc.subject | AMORPHOUS SILICION | - |
| dc.subject | COMPUTER MODELING | - |
| dc.subject | Otras Ciencias Físicas | - |
| dc.subject | Ciencias Físicas | - |
| dc.subject | CIENCIAS NATURALES Y EXACTAS | - |
| dc.title | Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools | - |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.type | info:ar-repo/semantics/articulo | - |
| Aparece en las colecciones: | CONICET | |
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